摘要
为了实现单晶4H-SiC化学机械抛光材料去除最优效果,基于正交试验法开展抛光工艺优化试验,研究抛光压力、转速、抛光液流量和磨粒粒度等工艺参数对4H-SiC晶圆不同晶面材料去除率的影响规律。结果表明:相同工艺参数对不同晶面材料去除影响的显著程度不同,通过极差分析获得了Si面和C面的最优抛光工艺组合,并进行了验证;在设定抛光压力为15 N,转速为120 r/min,抛光液流量为60 mL/min,磨粒粒度为50 nm的硅溶胶抛光液时,Si面的材料去除率为225.00 nm/h;与Si面有所不同,C面的最优参数组合依次为15 N、80 r/min、90 mL/min、80 nm,此时C面的材料去除率为240.74 nm/h。
To achieve the optimal material removal effect of single crystal 4H-SiC chemical-mechanical polishing,polishing process optimization experiment is carried out based on the orthogonal experiment method.Then,the effect of polishing pressure,rotation speed,flow rate of polishing slurry,and abrasive particle size on material removal rate of 4H-SiC with different crystal faces is analyzed.Experiment result shows that the same parameters have different influences on material removal rate of different crystal surfaces.Moreover,the optimal polishing process combination of Si surface and C surface is obtained and it is verified through range analysis.When polishing pressure is 15 N,rotation speed is 120 r/min,slurry flow rate is 60 mL/min,and silicon dioxide particle size is 50 nm,the material removal rate of Si surface is 225.00 nm/h.However,the material removal rate of C surface is 240.74 nm/h,and the corresponding process parameters are 15 N,80 r/min,90 mL/min,and 80 nm respectively,which are different from those of Si surface.
作者
李运鹤
班新星
朱建辉
王宁昌
韩少星
徐钰淳
段天旭
栗正新
LI Yunhe;BAN Xinxing;ZHU Jianhui;WANG Ningchang;HAN Shaoxing;XU Yuchun;DUAN Tianxu;LI Zhengxin(School of Mechanical and Electrical Engineering,Henan University of Technology,Zhengzhou 450001,China;Zhengzhou Research Institute for Abrasives&Grinding Co.,Ltd.,Zhengzhou 450001,China;School of Material Science and Engineering,Henan University of Technology,Zhengzhou 450001,China)
出处
《超硬材料工程》
CAS
2023年第3期26-31,共6页
Superhard Material Engineering
基金
中国博士后科学基金资助项目(2022M712923)
河南省重大科技专项项目(221100230100)
河南省高等学校重点科研项目(22A460003)。
关键词
化学机械抛光
单晶碳化硅
正交试验
材料去除率
极差分析
chemical mechanical polishing
single-crystal silicon carbide
orthogonal test
material removal rate
range analysis