基于InAs/GaAs异质结的δ掺杂磁半导体纳米结构的电子自旋输运

Electron Spin Transport ofδ-doped Magnetic Semiconductor Nanostructures Based on InAs/GaAs Heterojunctions

本文研究了基于InAs/GaAs异质结的δ掺杂磁纳米结构的电子自旋输运性质。计算了透射系数、电导和自旋极化。主要分析和讨论了δ掺杂的权重和位置对电子自旋极化输运的影响。结果表明,δ掺杂权重的增加可以显著抑制电子的透射系数和电导。通过改变δ掺杂的权重和位置可以实现较大程度的自旋极化。研究结果将有助于理解δ掺杂磁纳米结构中的实验现象和设计δ掺杂可调制自旋电子器件。

We investigated the electron spin transport properties ofδ-doped magnetic nanostructures based on InAs/GaAs heterojunctions.Transmission coefficient,conductance and spin polarization are calculated.The effects of the weight and position ofδdoping on the electron spin polarization transport are mainly analyzed and discussed.The results show that theδdoping weight can significantly suppress the transmission coefficient and conductance of electrons.A larger degree of spin polarization can be achieved by varying the weight and position of theδdoping.The interesting findings may be helpful for understanding the experimental phenomena inδdoping nanostructures and designingδdoped tunable spintronic devices.