一种具有源漏辅助栅的低肖特基势垒MOSFET

A Low Schottky Barrier MOSFET with Source-Drain Auxiliary Gate

为改善低肖特基势垒MOSFET器件的性能表现,提出一种具有源漏辅助栅的低肖特基势垒MOSFET。该器件采用鳍型主控栅,体硅两侧各设置一个浮栅作为辅助栅,通过最外围控制栅向浮栅冲入电荷。通过与传统低肖特基势垒场效应晶体管的输出特性曲线对比,分析所提出器件结构的性能优势;分析浮栅电荷量、氧化层厚度对器件的影响,并依此进行结构优化。经仿真分析表明,器件在工作时两侧的浮栅有助于实现更高的正向导通电流和更低的反向泄漏电流,大大降低器件的静态功耗。

In order to improve the performance of low Schottky barrier MOSFETs,a low Schottky barrier MOSFET with source-drain auxiliary gate is proposed.The device adopts fin-type main control gate,and two floating gates are set on both sides of bulk silicon as auxiliary gates,and charges are charged into the floating gates through the outermost control gates.Compared with the output characteristic curve of traditional low Schottky barrier field effect transistor,the performance advantages of the proposed device structure are analyzed.The influence of floating gate charge and oxide thickness on the device is analyzed,and the structure is optimized accordingly.The simulation analysis shows that the floating gates on both sides of the device are helpful to realize higher forward conduction current and lower reverse leakage current,which greatly reduces the static power consumption of the device.