一种高压驱动器的抗辐射加固设计

Radiation-Resistant Strengthening Design of a High-Voltage Driver

随着星载雷达技术的发展,发射及接收(T/R)组件系统中的发射功率越来越高。高压调制驱动器配套功率开关PMOS管,作为T/R组件中大功率GaN功放的电源调制驱动,大大提高了T/R组件的集成度及可靠性。介绍了一款T/R组件系统中32V的高压调制驱动器,基于高压BCD工艺进行设计、流片,设计上通过选取合适的高压器件及器件工作电压,优化逻辑结构、版图器件隔离及布线等技术进行抗辐射加固。经过验证,产品达到了100krad(Si)总剂量指标及75MeV·cm^(2)/mg的单粒子指标。

With the development of space-borne radar technology,the transmitting power of transmitter and receiver(T/R)module system is getting higher and higher.The high-voltage modulation driver,matched with the power switch PMOS,is used as the power modulation driver of the high-power GaN power amplifier in the T/R module,which greatly improves the integration and reliability of the T/R module.A high-voltage modulation driver working at 32 V is introduced,which is designed and fabricated based on high-voltage BCD process.In the design,selecting appropriate high-voltage structure and device working voltage,and optimizing logic structure,layout device isolation and wiring are used to strengthen the radiation resistance.After verification,the product achieves the total dose index of 100 krad(Si)and the single event index of 75MeV·cm^(2)/mg.