MMC子模块IGBT短路实验平台设计与实现

Design and Implementation of an Experimental Platform for IGBT Short-circuit in MMC Sub-module

在模块化多电平换流阀(modular multilevel convertor,MMC)实际运行中,绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)或其驱动器故障会导致子模块直通短路,造成器件损坏,该短路工况对于IGBT的短路保护以及可靠性研究具有重要意义。该文分析MMC子模块直通短路的类型并提出该短路工况实验平台的设计要求。针对短路振荡和电磁干扰问题进行优化设计,对短路回路寄生电感进行调整,研制MMC子模块短路实验平台并进行实验验证。实验结果表明,所研制的实验平台可以满足MMC子模块用IGBT的短路实验的需求。

In modular multilevel convertor(MMC)operation,insulated gate bipolar transistor(IGBT)or driver faults can cause sub-module short circuits,damaging devices.Studying this short-circuit condition is crucial for IGBT short-circuit protection and reliability research.This paper analyzes MMC sub-module short-circuit types and proposes,experimental platform design requirements.After optimizing short-circuit oscillations and electromagnetic interference and adjusting short-circuit circuit parasitic inductance,an MMC sub-module short-circuit experimental platform is developed.Experimental results show the developed platform meets IGBT short-circuit experiment requirements in MMC sub-module.