用于5G通信的射频微系统与天线一体化三维扇出型集成封装

Integrated 3D Fan-Out Package of RF Microsystem and Antenna for 5G Communication

本文研究了一种用于5G通信的射频微系统与天线一体化三维扇出型集成封装技术.通过在玻璃晶圆上使用双面布线工艺,实现毫米波天线阵列的制作.将TSV转接芯片与射频芯片倒装焊在玻璃晶圆上,再用树脂材料进行注塑,将玻璃晶圆与异构芯片重构成玻璃与树脂永久键合的晶圆.减薄树脂晶圆面漏出TSV转接芯片的铜柱,在树脂表面上完成再布线.把控制、电源管理等芯片倒装焊在再布线形成的焊盘处,植上BGA焊球形成最终封装体.利用毫米波探针台对射频传输线的损耗进行测量,结果表明,1 mm长的CPW传输线射频传输损耗在60 GHz仅为0.6 dB.在玻璃晶圆上设计了一种缝隙耦合天线,天线在59.8 GHz的工作频率最大增益达到6 dB.这为5G通信的射频微系统与天线一体化三维扇出型集成提供了一个切实可行的解决方案.

A 3D fan-out packaging method for the integration of 5G communication radio frequency(RF)microsys⁃tem and antenna is studied.Through the double-sided wiring technology on the glass wafer,the fabrication of millimeter wave antenna array is realized.Then the low power devices such as through silicon via(TSV)transfer chips and RF chips are flip-welded on the glass wafer,and the glass wafer is reformed into a wafer permanently bonded with glass and resin by the injection molding process with resin material.The thinning resin surface leaks out of the TSV transfer chip,and the re⁃wiring is carried out on the resin surface,and then the control,power management and other devices are flip-welded on the pad formed by RDL.Ball grid array(BGA)is implanted to form the final package.The loss of the RF transmission line is measured by using the RF millimeter wave probe table.The results show that the RF transmission loss from the chip end to the antenna end in the fan-out package is very small,and it is only 0.6 dB when working in 60 GHz.A slot coupling anten⁃na is designed on the glass wafer.The antenna can operate at 59.8 GHz and the maximum gain can reach 6 dB within the working bandwidth.This demonstration successfully provides a feasible solution for the 3D fan-out integration of RF mi⁃crosystem and antenna in 5G communication.