宽带可见光到电信波长的锗量子点光探测器

Ge Quantum Dot Photodetectors of Broadband Visible to telecom Wavelength

锗量子点(QD)光探测器(PD)是在锗衬底上制造的,在400~1550nm范围内表现出宽带、可见光到近红外光反应。获得了高达1.12A/W的室温光谱响应度(Rsp)和313%的内部量子效率(IQE),优于传统的硅和锗光二极管。降低工作温度和入射功率导致性能急剧增强,在T=100K,波长为1550nm,入射功率为10nW时,IQE=1000%。基于其简单的制造和硅技术的兼容性,这些锗QDPD代表了宽带、高性能可见光到近红外检测的一个有前途的选择.

Ge quantum dot(QD)photodetectors(PD)were fabricated on Ge substrates,exhibiting a broadband and visible to near-IR photoresponse in the 400~1550 nm range.Room-temperature responsivities(Rsp)up to 1.12 A/W and internal quantum efficiency(IQE)of 313%were obtained,superior to conventional Si and Ge photodiodes.Reducing the operating temperature and incident power led to a sharp increase in performance.When T was 100 K,wavelength of 1550nm,and incident power of 10 nW,the IQE was 1000%.Based on their simple fabrication and Si technology compatibility,these Ge QD PDs represent a promising alternative for broadband and high-performance visible to near-IR detection.