端部离子源提升SiC器件金属膜层结合牢固度的研究

Research on Improving Cohesive Fastness of Metal Films in SiC Device with End Hall Ion Source

介绍了端部离子源的工作原理,分析了SiC功率器件金属膜层脱落的原因,针对SiC器件金属膜层脱落问题,提出了一种表征金属膜层结合牢固度的方法。采用端部离子源对金属膜层进行碳清除实验,发现当SiO2介质清铣厚度超过10 nm时,金属膜层结合牢固度可靠,可满足工艺需求。

The working principle of End Hall Ion Source is introduced in this paper,analyzing the reasons for metal film detachment of SiC power devices,and proposed a method to characterize cohesive fastness of metal film in response to the problem of metal film detachment of SiC devices.Using End Hall Ion Source for carbon removal experiments on metal film layers,it is found that when the cleaning thickness of the SiO2 medium exceeds 10 nm,the cohesive fastness of the metal film layer is reliable and can meet the process requirements.