In掺杂MoO_(3)纳米带的室温氢敏性能研究

Room temperature hydrogensensing performance of In-doped MoO_(3) nanobelts

通过水热法成功制备了In掺杂的MoO_(3)纳米带,并探究了In掺杂浓度对其物相、形貌和室温氢敏性能的影响。结果表明,In掺杂后产物均为正交相MoO_(3)纳米带,平均长度约为5μm,直径约为200 nm。随着In掺杂浓度从2%(原子分数)提高到6%,材料的室温氢敏性能逐渐增强,但当掺杂浓度进一步提高到10%时,室温氢敏性能反而恶化。其中,6%掺杂的MoO_(3)纳米带表现出最佳的室温氢敏性能,对3000×10^(-6) H_(2)的响应度约为1.84,响应时间约为42 s。此外,所得In掺杂MoO_(3)纳米带具有良好的重复性、选择性和稳定性。

In this study,In-doped MoO_(3) nanobelts were synthesized using a hydrothermal method to investigate the effects of In doping concentration on their physical phase,morphology,and room-temperature hydrogen sensing properties.The results revealed that the In-doped products were orthorhombic MoO_(3) nanobelts with an average length of approximately 5μm and a diameter of about 200 nm.As the In-doping concentration increased from 2 to 6at%,the room-temperature hydrogen sensing properties of the nanobelts were gradually enhanced.However,the properties deteriorated when the In-doping concentration was further increased to 10at%.The MoO_(3) nanobelts with a doping concentration of 6at%exhibited the best room-temperature hydrogen sensing performance,with a response of approximately 1.84 to 3000 ppm H_(2) and a response time of about 42 s.Moreover,the In-doped MoO_(3) nanobelts showed good repeatability to hydrogen and exhibited excellent selectivity and stability.