摘要
The D0h luminescence of ZnO films deposited on p-type Si substrates is produced by metal-organic chemical vapor deposition(MOCVD).After annealing in the air at 700°C for an hour,the photoluminescence(PL)spectra,the I-V characteristics and the deep level transient spectroscopy(DLTS)of the samples are measured.All the samples have a rectification characteristic.DLTS signals show two deep levels of E1 and E2.The Gaussian fit curves of the PL spectra at room temperature show three luminescence lines b,c and d,of which b is attributed to the exciton emission.The donor level E1 measured by DLTS and the location state donor ionization energy Ed of the closely neighboring emission lines c and d are correlated.E1 is judged as neutral donor bound to hole emission(D0h).Moreover,the intensity of the PL spectra decreases while the relative density of E2 increases,showing that E2 has the property of a nonradiative center.
基金
supported by the National Natural Science Foundation of China (Grant Nos.50472009,10474091)
the Knowledge Innovation Engineering of the Chinese Academy of Sciences (kjcx2-sw-04-02).
