基于200 mm硅基GaN的单色Micro LED微显示芯片制备及量产难点分析

Preparation of Monochrome Micro LED Microdisplay Chip Based on 200 mm Silicon-based GaN and Analysis of its Batch Production Difficulties

应用200 mm硅基GaN外延片,研究晶圆级键合、薄膜转移和微小尺寸像素制备等技术,实现了Micro LED微显示阵列的点亮与显示功能。相对于传统蓝宝石基GaN外延晶圆,200 mm硅基GaN外延晶圆与硅基驱动晶圆尺寸更匹配,有利于通过晶圆键合工艺实现低成本量产。同时对工艺量产的难点和解决思路进行了分析,指出显示缺陷是目前亟待解决的问题。

Using 200 mm silicon-based GaN epitaxial wafers,wafer-level bonding,thin film transferring and micro-size pixel preparation were studied,and the lighting and display functions of Mi-cro LED microdisplay array were realized.Compared with traditional sapphire-based GaN epitaxial wafers,200 mm silicon-based GaN epitaxial wafers were more compatible with silicon-based drive wafer sizes,which was conducive to low-cost batch production through wafer bonding process.At the same time,the difficulties and ideas of batch production were analyzed,and it was pointed out that the defect was a problem that needed to be solved urgently.