摘要
采用快速热蒸发的方法制备薄膜,制作晶体管并模拟光、电信号刺激下的突触行为。研究表明,器件具有光、电信号调制的栅控能力,还可以模拟双脉冲抑制、长时程增强、巴普洛夫条件反射及遗忘过程、尖峰脉冲时间依赖可塑性等突触行为。
A Sb_(2)S_(3)-based transistor was fabricated to simulate synaptic behavior under optoelec tronic stimuli.Channel conductance of the transistor could be controlled by optoelectronic stimuli through the gate.Additionally,the device was able to simulate long-term potential,paired-pulse de-pression,Pavlov's dog learning and extinction,and spike-timing dependent plasticity.
作者
周婧文
ZHOU Jingwen(Institute of Micro-Nano Devices and Solar Cells,Fuzhou University,Fuzhou 350108,CHN)
出处
《光电子技术》
CAS
2023年第2期150-155,共6页
Optoelectronic Technology
基金
福建省自然科学基金(2019J01218)。
关键词
光电晶体管
人工突触
硫化锑
photonic transistor
artificial synapse
antimony sulfide
