摘要
Ultra-shallow Si p^(+)n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage(ECV).By comparing ECV results with those of secondary ion mass spectroscopy(SIMS),it is found that the dopant concentration profiles in heavily-doped p+layer as well as junction depths measured by ECV are in good agreement with those measured by SIMS.However,the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer.The ECV technique is also easy to control and reproduce.The ECV results of ultra-shallow junctions(USJ)formed by plasma doping followed by different annealing processes show that ECV is capable of reliably characterizing a Si USJ with junction depth as low as 10 nm,and dopant concentration up to 10^(21) cm^(-3).Also,its depth resolution can be as fine as 1 nm.Therefore,it shows great potential in application for characterizing USJ in the sub-65 nm technology node CMOS devices.
