铒掺杂氮氧化硅薄膜中不同敏化中心对铒离子光致和电致发光的影响

Effect of Two Different Sensitizers on the Photoluminescence and Electroluminescence of Er∶SiN_(x)O_(y)Films

研究了磁控溅射法制备的经不同温度热处理的掺铒氮氧化硅薄膜的光致发光和电致发光特性。实验发现光致发光中,提高热处理温度会促使硅纳米团簇的形成,它们的存在对薄膜中Er^(3+)离子的发光起到了敏化作用。在电致发光中,硅纳米团簇无法成为载流子的捕获中心,敏化剂变为硅悬挂键,注入的电子和空穴可以在硅悬挂键引入的相关陷阱能级处复合,复合后的能量传递给铒离子后使其产生发光。

The photoluminescence and electroluminescence properties of erbium-doped silicon oxynitride(Er∶SiN_(x)O_(y))films prepared by magnetron sputtering and subjected to different annealing temperatures were investigated.The experimental results showed that increasing the annealing temperature led to the formation of silicon nanoclusters,which played a sensitizing role in the luminescence of Er^(3+)ions in the films under photoluminescence.However,silicon nanoclusters could not serve as trapping centers for charge carriers in electroluminescence.Silicon dangling bonds acted as sensitizers,and injected electrons and holes could recombine at the trap levels introduced by the dangling bonds.The energy transfer to the Er^(3+)ions through the recombination process induced the electroluminescence in the Er∶SiN_(x)O_(y)films.