Ambipolar tribotronic transistor of MoTe_(2)

Two-dimensional(2D)tribotronic devices have been successfully involved in electromechanical modulation for channel conductance and applied in intelligent sensing system,touch screen,and logic gates.Ambipolar transistors and corresponding complementary inverters based on one type of semiconductors are highly promising due to the facile fabrication process and readily tunable polarity.Here,we demonstrate an ambipolar tribotronic transistor of molybdenum ditelluride(MoTe_(2)),which shows typical ambipolar transport properties modulated by triboelectric potential.It is comprised of a MoTe_(2)transistor and a lateral sliding triboelectric nanogenerator(TENG).The induced triboelectric potential by Maxwell’s displacement current(a driving force for TENG)can readily modulate the transport properties of both electrons and holes in MoTe_(2)channel and effectively drive the transistor.High performance tribotronic properties have been achieved,including low cutoff current below 1 pA·μm^(−1)and high current on/off ratio of~103 for holes and electrons dominated transports.The working mechanism on how to achieve tribotronic ambipolarity is discussed in detail.A complementary tribotronic inverter based on single flake of MoTe_(2)is also demonstrated with low power consumption and high stability.This work presents an active approach to efficiently modulate semiconductor devices and logic circuits based on 2D materials through external mechanical signal,which has great potential in human–machine interaction,intelligent sensor,and other wearable devices.