MOS管X射线照射损伤的恢复研究

Research on the Recovery of X-ray Irradiation Damage in MOS Tube

在通讯设备制造行业中,X射线作为一种无损检测技术有着广泛的应用,相关从业者可通过X射线检测来判别电子元器件中是否存在裂纹、空洞、异物、内部位移和焊接桥联等内部缺陷。但是在实际生产测试中发现,X射线照射也会对半导体器件的性能产生一定的负面影响。研究了X射线照射对MOS管的照射损伤,并探究了不同温度下退火对X射线照射损伤的恢复程度。模拟了严苛条件下的X射线照射过程,用110 kV、60μA的X射线对MOS管进行长时间的照射,测试其在照射前后阈值电压的数值变化;在25~220℃下对其进行退火实验并测试退火后其阈值电压的数值变化,证明了200℃及以上是有效的退火温度,并对实验结果进行初步的分析讨论。

As a non-destructive inspection technology,X-ray is widely used in the communication equipment manufacturing industry.Practitioners can determine whether there are internal defects such as cracks,voids,foreign objects,internal displacement,and soldering bridges in electronic components through X-ray detection.However,it is found that in actual production tests,X-ray irradiation also has a negative impact on the performance of semiconductor devices.The damage caused by X-ray irradiation on the MOS tube is studied,and the recovery degree of X-ray radiation damage caused by annealing at different temperatures is investigated.The X-ray irradiation under strict conditions is simulated.The MOS tube is irradiated with 110 kV and 60μA X-ray,and numercial change of the threshold voltage before and after irradiation is tested.The annealing experiments are carried out at 25℃~220℃,and the numerical changes of threshold voltage after annealing are tested.And it is proved that 200℃ and above is the effective annealing temperature. Finally,the preliminary analysis and discussion of the experimental results are carried out.