低介电常数聚酰亚胺薄膜材料的研究进展

Research progress in low dielectric constant polyimide film materials

随着微电子工业的高速发展,柔性印制电路板(FPCB)对其层间绝缘材料——聚酰亚胺(PI)薄膜的介电性能提出更高的要求。常规PI薄膜由于其介电常数偏高,无法满足5G高频通信的要求。本文从改变PI的本体结构和引入多孔结构两个方面,综述了近年来低介电常数PI薄膜材料的研究进展,同时对低介电常数PI薄膜材料的发展前景进行了展望。

With the rapid development of microelectronics industry,flexible printed circuit board(FPCB)has proposed higher requirements on the dielectric properties of polyimide(PI)films,which is the interlayer insulating materialof FPCB.The conventional PI film cannot meet the requirements of 5G high-frequency communication because of its high dielectric constant.In this paper,the research progress of PI film materials with low dielectric constant in recent years were reviewed from two aspects of changing the intrinsic structure of PI and introducing porous structure,and the development prospect of low dielectric constant PI film materials were proposed.