提升IGBT电流密度的制造工艺方法研究

Study on Manufacturing Process Methods for Improving IGBT Current Density

阐述改善功率器件制造工艺、提升IGBT电流密度的可行性方案,基于SJNFETⅢ工艺平台和SJIGBT新技术,制造出650V/20A的Super-IGBT器件,当通态压降为2V时,电流密度高达515A/cm^(2)。

This paper analyses a feasible plan to improve the manufacturing process of power devices and increase the current density of IGBT.Based on the SJNFET III process platform and SJ-IGBT new technology,a 650V/20A Super-IGBT device is manufactured.When the on state voltage drop is 2V,the current density can reach as high as 515A/cm^(2).