镍掺杂对FTO薄膜光电性能的影响及机理分析

Effect of Ni-Doping on Optical and Electrical Properties of FTO Thin Film and Its Mechanism Analysis

本文以单丁基三氯化锡(MBTC)为锡源,氟化铵(NH_(4)F)为氟源,甲醇为溶剂,六水合氯化镍(NiCl_(2)·6H_(2)O)为镍源,采用气溶胶辅助化学气相沉积(AACVD)制备了镍掺杂FTO薄膜。利用分光光度计、四探针电阻仪及霍尔效应测试仪对镍掺杂FTO薄膜的光学性能、电学性能进行表征和分析,并基于第一性原理对掺杂体系的电子结构进行了计算。结果表明,Ni掺杂的FTO薄膜为四方金红石结构,导电性能有所提高。当Ni/Sn为2%(原子数分数)时,品质因数Φ_(TC)达到3×10^(-2)Ω^(-1),电阻率ρ为3.79×10^(-4)Ω·cm,可见光平均透过率约为80%,载流子浓度n为6.88×10^(20)cm^(-3),迁移率μ为13.31 cm^(2)·V^(-1)·s^(-1)。

Ni-doped FTO thin films were prepared by aerosol-assisted chemical vapor deposition(AACVD)using monobutyltin trichloride(MBTC)as tin source,ammonium fluoride(NH_(4)F)as fluorine source,methanol as solvent,and nickel chloride hexahydrate(NiCl_(2)·6H_(2)O)as nickel source.The optical and electrical properties of FTO thin films were characterized and analyzed by spectrophotometer,four-probe resistor meter and Hall effect tester.The electronic structure of doped system was calculated based on first principles as well.The results indicate that the Ni-doped FTO thin films are tetragonal rutile structure,and the conductivity is improved.When Ni/Sn is 2%(atomic fraction),the quality factor Φ_(TC) reaches 3×10^(-2)Ω^(-1),the resistivityρis 3.79×10^(-4)Ω·cm,the average transmittance of visible light is about 80%,the carrier concentration n is 6.88×1020 cm-3,and the mobilityμis 13.31 cm^(2)·V^(-1)·s^(-1).