氧化锌铝陶瓷靶材制备工艺研究

Study on the preparation process of Al-doped-ZnO (AZO) ceramic target

AZO靶材是一种透明导电氧化锌合金靶材,具有优异的导电性和透明度,广泛应用于太阳能电池、液晶显示器、光电器件等领域。实验采用喷雾干燥工艺制备粉末+冷等静压成形+常压烧结法制备了掺铝氧化锌AZO陶瓷靶材。研究了不同烧结温度对氧化锌铝陶瓷靶材性能的影响,确定了最佳的工艺参数。研究结果表明,采用喷雾干燥制粉+冷等静压成形+1 300℃无压烧结,可以制备致密度达到99%,平均晶粒尺寸为20μm左右,电阻率为10-3Ω·cm,含有少量ZnAl2O4物相的AZO靶材。热等静压实验发现,热等静压可以将烧坯密度从97.2%提升至100%,达到理论密度。超高致密靶材可以承受更高功率、长时间溅射而不开裂,可以大幅提高溅射效率。

The AZO target is an alloy target of transparent conductive zinc oxide that exhibits excellent conduc‐tivity and transparency,which has wide application in various fields,including solar cells,liquid crystal displays,and optoelectronic devices.In this paper,Al-doped-ZnO(AZO)ceramic target was prepared by powder mixing+cold isostatic pressing+non-pressure sintering.The mixed powder was obtained by ball milling and spray drying.The effects of different sintering temperatures on the properties of AZO ceramic targets were studied,and the op‐timal process parameters were determined.The results show that the AZO target with excellent properties can be prepared by spray drying powder+cold isostatic pressing+non-pressure sintering at 1300℃,in which the den‐sity is 99%,average grain size is 20μm,resistivity is 10-3Ω·cm,and contains a small amount of ZnAl2O4 phase.The hot isostatic pressing experiment find that hot isostatic pressing can increase the density of the sintered billet from 97.2%to 100%,reaching the theoretical density.The ultra-high density target material can withstand higher power,long-term sputtering without cracking,and can significantly improve sputtering efficiency.