基于过渡金属硫化物的存储器研究型创新实验设计

Innovation research experiment design of memory based on transitional metal sulfides

实验教学是高校人才培养的重要环节,如何将科研内容融入实验教学是培养学生创新素养的关键。在信息化时代,数据类型多样化及其容量的急剧增长对存储器的要求越来越高。基于过渡金属硫化物的存储器件因具有较好的存储能力和较高的集成密度成为存储器领域的研究热点。因此,该文设计了基于过渡金属硫化物WS_(2)存储器的研究型创新实验。采用机械剥离和干法转移制备了WS_(2)场效应晶体管(FET),采用拉曼光谱对WS_(2)进行表征,利用氧等离子体处理SiO_(2)表面引入界面态来实现多位数据存储,并进一步对存储器的电学特性和存储性能进行了测试。该创新实验涵盖了材料表征、存储器件制备、电学和存储特性测试以及机理分析等过程,涉及半导体、材料学、微电子和集成电路多个学科领域,且能结合实际科研内容,可极大地提高学生的科研积极性,有利于培养学生的科研思维和创新能力。

Experimental teaching plays an important role in cultivation of talents in college,how to incorporate scientific research into experimental teaching is the key for creativity training of undergraduates.In information era,various data types and the vast increase of data storage increase the requirement of memory with high performance.Memory devices based on transition metal sulfides have become a research hotspot in the field of memory due to their good storage capacity and high integration density.Therefore,an innovative research experiment of memory based on transitional metal sulfides WS_(2) memory is designed in this paper.Mechanical peeling and dry transfer are used to fabricate field effect transistor(FET)devices based on WS_(2).Raman spectra is used for WS_(2) material characterization.Oxygen plasma treatment is employed to treat the surface of SiO_(2) by interface engineering to realize multistate memory,which is followed by electrical and memory property measurements.This innovative experiment covers contents from material characterization,memory device fabrication,electrical and memory property measurement and the mechanism to achieve memory and so on,which is not only related to semiconductor,material science,microelectronics and integrated circuits,also incorporated real research content,and thus can enhance the research enthusiasm of undergraduates and further cultivate their scientific and innovative capabilities.