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PCB通孔高电流密度电镀铜用加速剂的研究

Study on accelerators for copper electroplating of through-hole on PCB at high current density
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摘要 在由75 g/L硫酸铜、200 g/L浓硫酸和65 mg/L盐酸组成的基础镀液中添加1 mg/L聚乙二醇(PEG10000)作为抑制剂,1 mg/L2-巯基-5-甲基-1,3,4-噻二唑(MMTD)作为整平剂,以及1mg/L聚二硫二丙烷磺酸钠(SPS)、噻唑啉基二硫代丙烷磺酸钠(SH110)、3-(苯并噻唑-2-巯基)丙烷磺酸钠(ZPS)、异硫脲丙基硫酸钠(UPS)、聚二硫二乙烷磺酸钠(SES)或聚二硫二己烷磺酸钠(SHS)作为加速剂。先通过计时电位法初步筛选得到合适的加速剂,再通过印制电路板(PCB)通孔电镀实验确定最佳加速剂。结果表明,采用1 mg/L UPS作为加速剂时,镀液在3 A/dm^(2)电流密度下的深镀能力达86.9%,所得铜镀层表面致密平整,抗热冲击性能良好。 The electrolyte comprising CuSO_(4)ꞏ5H_(2)O 75 g/L,concentrated sulfuric acid 200 g/L,and concentrated hydrochloric acid 65 mg/L for copper electroplating of through-hole on printed circuit board(PCB)was added with 1 mg/L polyethylene glycol(PEG10000)as inhibitor,1 mg/L 2-mercapto-5-methyl-1,3,4-thiadiazole(MMTD)as leveler,and 1 mg/L bis-(sodium sulfopropyl)-disulfide(SPS),sodium thiazolinyl dithiopropane sulfonate(SH110),sodium 3-(benzothiazol-2-ylthio)-1-propanesulfonate(ZPS),sodium 3-(amidinothio)-1-propanesulfonate(UPS),bis-(sodium sulfoethyl)-disulfide(SES),or bis-(sodium sulfohexyl)-disulfide(SHS)as accelerator.Suitable accelerators were selected by chronopotentiometry firstly,and then the optimal one was determined by copper electroplating experiment of through-hole on PCB.The electrolyte containing 1 mg/L UPS as accelerator had a throwing power of 86.9%at a current density of 3 A/dm^(2),and the Cu coating electrodeposited therefrom was compact and smooth with good thermal shock resistance.
作者 杨晶 曾祥键 陈春 潘湛昌 胡光辉 YANG Jing;ZENG Xiangjian;CHEN Chun;PAN Zhanchang;HU Guanghui(School of Chemical Engineering and Light Industry,Guangdong University of Technology,Guangzhou 510006,China;Huizhou King Brother Circuit Technology Co.,Ltd.,Huizhou 516000,China)
出处 《电镀与涂饰》 CAS 北大核心 2023年第17期50-55,共6页 Electroplating & Finishing
关键词 印制电路板 通孔 电镀铜 加速剂 计时电位法 printed circuit board through-hole copper electroplating accelerator chronopotentiometry
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  • 1陈世荣,杨琼,陈志佳,周湘陵,梁志立.高端PCB镀铜阳极需用低磷微晶材料[J].印制电路信息,2012(S1):260-264. 被引量:4
  • 2韩志慧,陈俊英,李新宝,张景伟,刘国际.硫酸介质中铜阳极钝化的电化学研究[J].郑州大学学报(工学版),2004,25(4):60-63. 被引量:2
  • 3许家园,杨防祖,谢兆雄,周绍民.酸性镀铜液中Cl^—离子的作用机理研究[J].厦门大学学报(自然科学版),1994,33(5):647-651. 被引量:26
  • 4Chun Wei Lu, Wei Ping Dow. A copper electrodeposition technique for through- hole filling [ C ]. The Electrochemi- cal Society,217.
  • 5Pradeep Dixit,Jianmin Miao. Aspect-ratio-dependent cop- per electrodeposition technique for very high aspect-ratio through-hole plating [ J ]. Journal of Electrochemical Soci- ety ,2006,153 (6) : G552- G559.
  • 6林金堵.直流电镀在微孔、盲孔镀中的重大突破[C]//2007年上海市电子电镀学术年会论文集.上海:2007.
  • 7Chong Wang, Jinqiu Zhang. Through-hole copper electro- plating using nitrotetrazolium blue chloride as a leveler [ J]. Journal of The Electrochemical Society, 2013, 160(3) :D85- D88.
  • 8Yung E K, Romankiw L T. Fundamental study of acid cop- per through-hole electroplating process [ J ]. Journal of The Electrochemical Society, 1989,136 ( 2 ) ;756-757.
  • 9Min Tan, John N. Harb. Additive behavior during copper electrodeposition in solutions containing CI-, PEG and SPS [ J ]. ournal of The Electrochemical Society, 2003, 150(6) : C420- C425.
  • 10Abdel Rahman H H, Moustafa A H E, Abdel Magid S M K. High rate copper electrodeposition in the presence of inorganic salts [ J ]. International Journal of Electrochemi- cal Science, 2012,7 : 6959-6975.

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