摘要
以Nb−18Si(摩尔分数,%)复合材料为研究对象,分析共晶组织几何形态对电子束表面熔化(EBSM)快速凝固条件的响应机理及其对材料硬度的影响规律。研究结果表明,Nbss/Nb3Si共晶在电弧熔炼凝固条件下以棒状形态为主,而在EBSM凝固条件下转变为层片状形态。利用原子尺度的扫描透射电子显微镜(STEM)和近原子尺度的三维原子探针(APT)对样品进行表征,获得纳米Nbss/Nb_(3)Si共晶的三维层片状结构特征及其组分。与棒状共晶相比,EBSM凝固条件下形成的层片状共晶组织显著细化(共晶间距为39.5 nm),Nbss相体积分数大幅增加(约41%)。随着显微组织由微米棒状共晶转变为纳米层片状共晶,材料硬度显著增加,达到13.9 GPa。
To improve the mechanical properties of niobium/silicide in-situ composites via rapid solidification,the evolution of eutectic geometry and the corresponding hardening effect in a prototype Nb−18Si(at.%)composite upon electron beam surface melting(EBSM),i.e.,a rapid remelting and solidifying sequence,were studied.Results show that rod-like Nb solid solution(Nbss)/Nb_(3)Si eutectics prevail in the arc-melted state,yet evolve into lamellar arrangements after EBSM.Atomic scale scanning transmission electron microscopy(STEM)and near-atomic scale atom probe tomography(APT)were employed to characterize the three-dimensional stacking of nano-laminated Nbss/Nb_(3)Si eutectics and their compositions.Compared with the rod-like eutectics,the lamellar eutectics via EBSM demonstrate a prominent eutectic refinement(39.5 nm in spacing)and an increased volume fraction of Nbss(~41%).Nano-indentation testing reveals that with the microstructural transition from micro-rod to nano-lamella eutectics,a significant increment in hardness up to 13.9 GPa is achieved.
作者
郭跃岭
张思源
何骏阳
逯文君
贾丽娜
李志明
张虎
Yue-ling GUO;Si-yuan ZHANG;Jun-yang HE;Wen-jun LU;Li-na JIA;Zhi-ming LI;Hu ZHANG(School of Mechanical Engineering,Beijing Institute of Technology,Beijing 100081,China;Frontier Institute of Science and Technology Innovation,Beihang University,Beijing 100191,China;Max-Planck-Institut für Eisenforschung,Max-Planck-Straße 1,Düsseldorf,40237,Germany)
基金
the financial support from China Postdoctoral Science Foundation(No.2021M690384)
the National Natural Science Foundation of China(No.51571004)。
关键词
铌/硅化物复合材料
快速凝固
共晶形态
层片状共晶
棒状共晶
niobium/silicide composites
rapid solidification
eutectic morphology
lamellar eutectics
rod-like eutectics