期刊文献+

碳化硅外延设备干扰问题与解决方案

Interference Problem and Solution of Silicon Carbide Epitaxial Equipment
下载PDF
导出
摘要 SiC外延设备工作过程中经常会遇到信号干扰的问题,会对生产造成不便,更严重的则会造成设备损毁从而危险人身安全。为此,从工程实践的角度出发,针对控制系统一般性干扰问题和SiC外延设备特殊性干扰问题展开分析。基于目前已有的抗干扰技术,从干扰源、干扰途径入手,系统性地对碳化硅外延设备研发中出现的干扰问题进行分析解决。选取具有特点的通讯干扰、视频信号干扰、模拟信号干扰等干扰问题进行分析;通过RS485隔离集线器、双绞屏蔽线、接地铜带、抗干扰磁环等,提升设备生产过程中的抗干扰性能;使用示波器、万用表等仪器进行检测。结果表明:采用所提方法能够明显改善信号质量,所提方案稳定、可靠,研究结果为SiC外延设备的研发与工作生产提供参考。 In the working process of SiC epitaxial equipment,it often encounters the problem of signal interference,which will cause inconvenience to the production,and more seriously,it will cause equipment damage and thus dangerous personal safety.Therefore,from the perspective of engineering practice,the general interference problem of the control system and the special interference problem of SiC epitaxial equipment are analyzed.Based on the existing anti-interference technology,the interference problems arising in the research and development of the silicon carbide epitaxial equipment are systematically analyzed and solved from the perspective of the interference source and the interference way.The characteristic communication interference,video signal interference,analog signal interference and other interference problems are selectd for analysis;through RS485 isolation hub,twisted pair shielding wire,grounding copper strip,anti-interference magnetic ring and so on,the anti-interference performance of the equipment in the production process is improved;oscilloscope,multimeter and other instruments are used for detection.The results show that by using the proposed method,the signal quality can be significantly improved,the proposed scheme is stabled and reliabled,and the research results provide reference for the development and production of SiC epitaxial equipment.
作者 高桑田 毛朝斌 戴科峰 盛飞龙 王鑫 仇礼钦 梁启恒 Gao Sangtan;Mao Chaobin;Dai Kefeng;Sheng Feilong;Wang Xin;Chou Liqin;Liang Qiheng(Ji Hua Laboratory,Foshan,Guangdong 528200,China)
机构地区 季华实验室
出处 《机电工程技术》 2023年第8期280-283,共4页 Mechanical & Electrical Engineering Technology
基金 季华实验室项目(X210241TC210)。
关键词 SiC外延设备 电磁干扰 抗干扰 PLC控制系统 SiC epitaxy equipment electromagnetic interference anti-interference PLC control system
  • 相关文献

参考文献12

二级参考文献24

共引文献41

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部