摘要
报道了分子束外延生长HgTe/CdTe超晶格结构相关技术。采用HgTe/CdTe超晶格结构进行As掺杂是降低As掺杂元素激活温度的技术路径之一。本文采用分子束外延技术在3 in硅衬底上获得了HgTe/CdTe超晶格结构材料,并采用250℃低温退火获得了激活的原位As掺杂碲镉汞材料。
In this paper,molecular beam epitaxy(MBE)growth of HgTe/CdTe superlattices structure related technology is introduced.As doping with HgTe/CdTe superlattice structure is one of the technical paths to reduce the activation temperature of as doped HgCdTe.HgTe/CdTe superlattice materials are obtained on 3 inch silicon substrates by molecular beam epitaxy,and activated in situ As doped HgCdTe materials are obtained by low temperature annealing at 250℃.
作者
高达
李震
贺融
王丹
邢伟荣
王丛
折伟林
GAO Da;LI Zhen;HE Rong;WANG Dan;XING Wei-rong;WANG Cong;SHE Wei-lin(North China Research Institute of Electro-Optics,Beijing 100015,China;Chongqing Jialing Huaguang Photoelectric Technology Co.,Ltd.,Chongqing 400700,China)
出处
《激光与红外》
CAS
CSCD
北大核心
2023年第9期1384-1387,共4页
Laser & Infrared
