基于二维钙钛矿(PEA)_(2)PbI_(4)的光电探测器

Photodetector Based on Two-dimensional Perovskite(PEA)_(2)PbI_(4)

二维(2D)钙钛矿以其固有的量子阱结构、较大的激子结合能和良好的稳定性,在光电应用领域中具有广阔的前景。然而,提高二维钙钛矿薄膜质量、降低成本并简化制备工艺仍然面临巨大的挑战。本工作在低退火温度(80℃)且无需其他特殊处理的条件下,采用溶液法制备高质量二维钙钛矿(PEA)_(2)PbI_(4)薄膜,并进一步制备了光电探测器。结果表明,这种光电探测器有较低的暗电流(10^(-11)A),在450 nm光照下具有良好的响应度(107 mA·W^(-1))、较高的探测率(2.05×10^(12)Jones)和快速响应时间(250μs/330μs)。持续控制光照1200 s后,器件可以保持95%的光电流。此外,器件静置30 d后光电流几乎保持不变。本研究为开发稳定和高性能光电器件提供了良好的途径。

Two-dimensional(2D)perovskite displays great potential in optoelectronic applications due to its inherent quantum well structure,large exciton binding energy and good stability.However,facile preparation of high-quality 2D perovskite films with low cost remains a huge challenge.In this work,high-quality two-dimensional perovskite(PEA)_(2)PbI_(4)films were prepared by solution method at low annealing temperature(80℃)without other special treatments,and further applied in the field of photodetectors.The results show that this photodetector possessed a low dark current(10^(-11)A),good responsiveness illuminated at a wavelength of 450 nm(107 mA·W^(-1)),high detection rate(2.05×10^(12)Jones)and fast response time(250μs/330μs).After 1200 s continuous illumination,the device maintains 95%initial photocurrent.In addition,the photocurrent remains almost unchanged after storage for 30 d.This work provides promising strategy to develop stable and high-performance optoelectronic devices.