TOPCon太阳电池中多晶硅层磷掺杂工艺的优化及其对电性能的影响

OPTIMIZATION OF PHOSPHORUS DOPING PROCESS FOR POLY-Si LAYER IN TOPCon SOLAR CELLS AND ITS EFFECT ON ELECTRICAL PERFORMANCE

随着光伏行业的飞速发展,PERC太阳电池技术已无法满足太阳电池光电转换效率的进一步提升,TOPCon太阳电池因具有高光电转换效率,被认为是下一代太阳电池技术的可选方案。针对TOPCon太阳电池的多晶硅层的磷掺杂量、推进温度及推进时间对多晶硅层、硅衬底中磷掺杂特性及电性能参数的影响进行了研究。研究结果显示:在隧穿氧化层及多晶硅层厚度分别设定为1.5和130.0 nm的条件下,磷掺杂参数设置为通源流量为1400sccm、通源时间为25min、推进温度为880℃、推进时间为30min时,既保证了钝化效果,也保证了欧姆接触和寄生吸收在合理的区间,TOPCon太阳电池的光电转换效率达到了最大值,为24.48%。

With the rapid development of the PV industry,the technology of PERC solar cells is no longer able to meet the further improvement of solar cell photoelectric conversion efficiency.TOPCon solar cells are considered an optional solution for the next generation of solar cell technology due to their high photoelectric conversion efficiency.This paper investigates the effects of phosphorus doping amount,propulsion temperature,and propulsion time on the phosphorus doping characteristics of the poly-Si layer and silicon substrate and electrical performance parameters in TOPCon solar cells.The research results show that under the conditions of setting the thickness of the tunneling oxide layer and poly-Si layer to 1.5 and 130.0 nm,respectively,phosphorus doping parameters are set to a doping rate of 1400 sccm,a doping time of 25 min,a propulsion temperature of 880℃,and a propulsion time of 30 min,both passivation effect and ohmic contact and parasitic absorption are ensured within a reasonable range.The photoelectric convesion efficiency of TOPCon solar cells reaches its maximum value,which is 24.48%.