磁流影响下的Sherman神经元分岔动力学特性

Bifurcation dynamics of Sherman neuron under magnetic flow effect

对磁控忆阻器影响下的Sherman神经元系统的分岔行为进行分析。分别选取胰岛β细胞神经元模型膜电位的反转电压V_(Ca)和V_(K)作为分岔参数,使用峰峰间期分岔图、时间响应图以及相平面图对神经元系统分岔过程进行详细分析,随着参数变化,发现Sherman神经元系统表现出完全相反的放电节律。整体表现为带有混沌的加周期簇放电、倍周期簇放电以及倍周期峰放电。在加周期簇放电过程中,发现随周期数的增加,神经元系统膜电位的放电振幅逐渐减小,簇内放电尖峰的振幅值随着周期数增加降低更为明显。

The bifurcation behavior of Sherman neuron system under the influence of magnetron memristor is analyzed.Taking the membrane potential reversal voltages V_(Ca) and V_(K) of isletβ-cell neuron model as bifurcation parameters,the inter-spike interval bifurcation diagram,time response diagram and phase plane diagram are used to analyze the bifurcation process.It can be found that with the change of parameters,the Sherman neuron system shows completely opposite firing rhythm.The overall performance is chaotic plus periodic cluster firing,multiple periodic cluster firing and periodic peak firing.In the process of periodic cluster firing,with the increase of the number of periods,the amplitude of the membrane potential decreases gradually,and the amplitude of the intra-cluster firing peak decreases more obviously.