摘要
运用传输矩阵法和固定相位法研究拓扑绝缘体与SINC函数型光子晶体分界面上的Goos-Hänchen效应。结果表明,两种线极化波在分界面处的Goos-Hänchen位移随入射角、拓扑绝缘体的介电常数、函数光子晶体周期数不同而呈现不一样的规律。可以通过调节入射线极化波的入射角、改变函数光子晶体周期数或在表面涂覆不同的拓扑绝缘体来控制分界面上的Goos-Hänchen位移。
The Goos-Hänchen effect at the interface between topological insulator and SINC functional photonic crystal is studied by using the transfer matrix method and the method of stationary phase.The results show that the Goos-Hänchen shift of the two linearly polarized waves at the interface varies with the incident angle,the dielectric constant of the topological insulator,and the number of functional photonic crystal periods.The Goos-Hänchen shift at the interface can be controlled by adjusting the incident angle,the number of functional photonic crystal periods or coating different topological insulator films on the surface.
作者
王筠
WANG Yun(College of Physics and Mechanical and Electrical Engineering,Hubei University of Education,Wuhan 430205,China;Institute of Optoelectronic Materials and Components,Hubei University of Education,Wuhan 430205,China)
出处
《湖北第二师范学院学报》
2023年第8期8-17,共10页
Journal of Hubei University of Education