仲丁醇反溶剂法中添加D4TBP钝化MAPbI3薄膜缺陷的研究

Study on Passivation of Defects in MAPbI3 Thin Films by Adding D4TBP in the Secondary Butanol Anti-solvent Method

将D-4-叔丁基苯丙铵酸(D4TBP)添加到仲丁醇反溶剂中,利用仲丁醇对MAPbI3晶界缺陷的强渗透性,实现对缺陷的充分定向钝化。结果表明,器件的开路电压和填充因子都有明显提升,将器件的平均能量转换效率从17.12%提高到19.05%。D4TBP材料有效钝化钙钛矿薄膜的表面及晶界处的缺陷,从而减少缺陷浓度和降低陷阱能级深度,抑制了钙钛矿薄膜中载流子的无辐射复合。这是因为铵基、羧基及4-叔丁基苯基官能团系统钝化钙钛矿多晶薄膜中卤素阴离子、金属阳离子等众多缺陷的结果。

D-4-tert-butylphenylpropanoic acid(D4TBP)was added to the secondary butanol reverse solvent,and the strong permeability of secondary butanol to MAPbI3 grain boundary defects was utilized to achieve sufficient directional passivation of defects.The results show that the open circuit voltage and filling factor of the device have significantly improved,increasing the average energy conversion efficiency of the device from 17.12%to 19.05%.The D4TBP material effectively passivates defects on the surface and grain boundaries of perovskite thin films,thereby reducing defect concentration and depth of trap energy levels,and suppressing non radiative recombination of charge carriers in perovskite thin films.This is because the ammonium,carboxyl,and 4-tert butylphenyl functional group systems passivate numerous defects such as halogen anions and metal cations in perovskite polycrystalline films.