期刊文献+

曝光时不同载具对光敏玻璃通孔工艺的影响 被引量:1

Effect of Different Carriers During Exposure Process on the Through-Glass Via Formation Process of Photosensitive Glass
下载PDF
导出
摘要 基于光敏玻璃,采用紫外光曝光、热处理以及湿法刻蚀方法制备出玻璃通孔,研究了曝光过程中不同反射率载具对玻璃通孔工艺的影响,揭示了光敏玻璃曝光时的改性过程。实验结果表明,曝光量相同时,反射率高的载具有益于玻璃通孔的制备。 Based on photosensitive glass,the through-glass via(TGV)was obtained by using UV exposure,heat treatment and wet etching.The effect of carriers with different reflectivity during exposure process on the formation of TGV was studied,and modification process of photosensitive glass during exposure was revealed.The experimental results showed that when the exposure amount was the same,the carrier with high reflectivity was beneficial to the formation of TGV.
作者 刘书利 叶刚 李奇哲 夏晨辉 LIU Shu-li;YE Gang;LI Qi-zhe;XIA Chen-hui(Theth Research Institute of CETC)
出处 《中国集成电路》 2023年第8期65-69,共5页 China lntegrated Circuit
关键词 光敏玻璃 玻璃通孔 载具 改性过程 photosensitive glass through-glass via carriers modification process
  • 相关文献

参考文献11

二级参考文献33

  • 1Michael Quirk,Julian Serda著,韩郑生等译.半导体制造技术[M].北京:电子工业出版社,2009.
  • 2侯化国,王玉民.正交试验法[M].吉林:吉林人民出版社,1986.8.
  • 3Schroder H,Brusberg L,Arndt-Staufenbiel N,et al.Glass Panel Processing for Electrical and Optical Packaging in Electronic Components and Technology Conference[C].2011 IEEE 61st,FL:Lake Buena Vista,2011:625-633.
  • 4Sridharan V,Min S,Sundaram V,et al.Design and Fabrication of Bandpass Filters in Glass Interposer with Through-Package-Vias(TPV)[C].Proceedings of 60th Electronic Components and Technology Conference(ECTC),USA:Las Vegas,2010:530-535.
  • 5Ranf S,Ventzek Peter L G.Model for an Inductively Coupled Ar/c-C4F8Plasma Discharge[J].Journal of Vacuum Science&Technology,2002,A20:14-24.
  • 6Pavius M,Hibert C,Flvckiger Ph,et al.Profile Angle Control in Si O2Deep Anisotropic Dry Etching for MEMS Fabrication in MEMS[C].17th IEEE International Conference on Micro Electro Mechanical Systems,Technical Digest,2004:669-672 .
  • 7Zhang, Rong,Lo, Jeffery C.C.,Lee, S. W. Ricky.Design and fabrication of a silicon interposer with TSVs in cavities for three-dimensional IC packaging. IEEE Transactions on Device and Materials Reliability . 2012
  • 8PARES G,KAROUI C,ZAID A,et al.Full integration of a 3D demonstrator with TSV first interposer,ultra thin die stacking and wafer level packaging. Proceedings of the 63rdIEEE Electronic Components and Technology Conference . 2013
  • 9Lu Yuan,Yin Wen,Zhang Bo,Yu Daquan,Wan Lixi,Shangguan Dongkai,et al.A new 2.5D TSV package assembly approach. Electronic Components and Technology Conference . 2013
  • 10G.Hariharan,R.Chaware,L.Yip et al.Assembly process qualification and reliability evaluations for heterogeneous 2.5D FPGA with HiCTE ceramic. Electronic Components&Technology; Conference . 2013

共引文献75

同被引文献9

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部