基于FinFET器件结构的高精度温度传感器设计

High precision temperature sensor based on FinFET device structure

随着标准CMOS工艺向二十纳米以下推进,平面CMOS晶体管开始向三维(3D)FinFET器件结构过渡,寄生三极管的电流增益β大幅下降,使以寄生PNP管作为温度传感器件的温度传感电路不再适用。本文基于标准CMOS工艺,以寄生垂直NPN管作为温度传感器件,给出了三维FinFET器件结构下的数字温度传感器设计。该数字温度传感器在-55℃至+125℃的温度范围内,电路仿真精度达±0.2℃,芯片测试精度达±0.3℃。

With the advancement of the standard CMOS process below 20 nm,the planar CMOS transistor began to transition to the three-dimensional(3D)FinFET device structure,and the current gain of the parasitic triode decreased significantly.The temperature sensing circuit with the parasitic PNP triobe as the temperature sensing device is no longer applicable.Based on the standard CMOS process and using vertical NPN triobe as temperature sensor,this paper gives the design of a temperature sensor based on 3D FinFET device structure.In the temperature range of-55℃to+125℃,the digital temperature sensor has the circuit simulation accuracy of±0.2℃and the chip test accuracy of±0.3℃.