Impact of annealing temperature on the ferroelectric properties of W/Hf_(0.5)Zr_(0.5)O_(2)/W capacitor

Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with temperature varied from 350℃to 550℃,on the electricity,ferroelectricity and reliability of a Hf_(0.5)Zr_(0.5)O_(2)(HZO;7.5 nm)film capacitor.It was found that HZO film annealed at a low temperature of 400℃can effectively suppress the formation of the monoclinic phase and reduce the leakage current.HZO film annealed at 400℃also exhibits better ferroelectric properties than those annealed at 350℃and 550℃.Specifically,the 400℃-annealed HZO film shows an outstanding 2Pr value of 54.6μC·cm^(-2)at±3.0 MV·cm^(-1),which is relatively high compared with previously reported values for HZO film under the same electric field and annealing temperature.When the applied electric field increases to±5.0 MV·cm^(-1),the 2Pr value can reach a maximum of 69.6μC·cm^(-2).In addition,the HZO films annealed at 400℃and 550℃can endure up to bout 2.3×10^(8)cycles under a cycling field of 2.0 MV·cm^(-1)before the occurrence of breakdown.In the 400℃-annealed HZO film,72.1%of the initial polarization is maintained while only 44.9%is maintained in the 550℃-annealed HZO film.Our work demonstrates that HZO film with a low crystallization temperature(400℃)has quite a high ferroelectric polarization,which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.