摘要
The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni onβ-Ga_(2)O_(3)to form NiO/β-Ga_(2)O_(3)p-n heterojunction diodes(HJDs).The NiO/β-Ga_(2)O_(3)HJDs exhibit excellent electrostatic properties,with a high breakdown voltage of 465 V,a specific on-resistance(Ron,sp)of 3.39 mΩ·cm^(2),and a turn-on voltage(V on)of 1.85 V,yielding a static Baliga's figure of merit(FOM)of 256 MW/cm^(2).Also,the HJDs have a low turn-on voltage,which reduces conduction loss dramatically,and a rectification ratio of up to 108.Meanwhile,the HJDs'reverse leakage current is essentially unaffected at temperatures below 170?C,and their leakage level may be controlled below 10^(-10)A.This indicates that p-NiO/β-Ga_(2)O_(3)HJDs with good thermal stability and high-temperature operating ability can be a good option for high-performanceβ-Ga_(2)O_(3)power devices.
作者
黄义
杨稳
王琦
高升
陈伟中
唐孝生
张红升
刘斌
Yi Huang;Wen Yang;Qi Wang;Sheng Gao;Wei-Zhong Chen;Xiao-Sheng Tang;Hong-Sheng Zhang;Bin Liu(School of Optoelectronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China;School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China)
基金
the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality(cstc2019jszx-zdztzxX0005)
the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality(cstc2020jscx-gksbX0011)
the Science and Technology Research Program of Chongqing Municipal Education Commission(KJQN202100614)
the Natural Science Foundation of Chongqing(cstc2021jcyj-bshX0146)。