Si/SiC混合并联功率器件开关模式优化及特性分析

Switching Mode Optimization and Characteristic Analysis of Si/SiC Hybrid Parallel Devices

在对比SiC MOSFET和Si IGBT器件开关特性的基础上,提出了一种SiC MOSFET和Si IGBT混合并联器件的优化开关模式,并结合系统稳态模型,分析了其非理想开关过程特性。利用双脉冲测试,对不同开通/延迟时间下的混合并联器件开关特性展开了实验。实验结果表明,所提开关模式能够同步实现SiC MOSFET扩容并降低Si IGBT的开关损耗。该研究成果可对拓展两种开关器件的混合应用提供技术参考。

Based on the comparison of the switching characteristics of SiC MOSFET and Si IG‑BT devices,an optimized switching mode of SiC MOSFET and Si IGBT hybrid parallel devices was proposed in this paper.The non-ideal switching process characteristics of the hybrid parallel devices were analyzed through the steady-state modeling.The switching characteristics of hybrid parallel devices under different on-off and delay times were verified experimentally by double pulse test.The experimental results show that the proposed switching mode can synchronously realize the expansion of SiC MOSFET and reduce the switching loss of Si IGBT.The research results obtained in this paper provide a technical reference for expanding the hybrid application of the two switching devices.