摘要
为解决通过更改器件设计来提升电路抗静电放电(ESD)能力时成本高的问题,从栅控二极管的工艺出发,研究CAN总线电路抗ESD能力提升方法。通过TCAD仿真,评估了沟道掺杂对于栅控二极管抗ESD能力的影响,发现调整ESD离子注入工艺可以优化栅控二极管导通电阻,提高ESD保护窗口内的泄流能力,将电路抗ESD能力从2000 V提高到3000 V,为电路级芯片的失效问题提供了一种解决方案。
In order to solve the problem of high cost when changing the device design to improve the anti-electrostatic discharge(ESD)ability of the circuit,the method of improving the anti-ESD ability of the CAN bus circuit from the process side was studied in this paper.The effect of channel doping on the anti-ESD ability of the gated diode was evaluated by TCAD simulation.It is found that adjusting the ESD ion implantation process can optimize the on-resistance of the gated diode,improve the leakage capability in the ESD protection window,thus increasing the circuit anti-ESD capability from 2000 V to 3000 V,providing a solution to the failure of circuit-level chips.
作者
贺琪
赵晓松
张庆东
顾祥
赵杨婧
HE Qi;ZHAO Xiaosong;ZHANG Qingdong;GU Xiang;ZHAO Yangjing(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi,Jiangsu,214072,CHN;School of Electronic&Information Engineering,Nanjing University of Information Science&Technology,Nanjing,210000,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2023年第4期366-369,共4页
Research & Progress of SSE