掩膜电化学沉积缺陷去除数值分析及实验研究

Numerical Analysis and Experimental Research on Defects Remove in Mask Electrochemical Deposition

对掩膜电化学沉积中缺陷的去除进行数值分析及实验研究。阐述掩膜电化学沉积的缺陷形成原因以及缺陷去除原理;对缺陷去除过程进行电场分析以及数学计算,得到了“马鞍”正弦轮廓振幅随着电流和电流通过时间沉积的关系式,计算得到微柱顶端高度差降为3μm的电解加工时间为9.48 s。开展对比实验,实验结果表明:在电解平整加工后微柱阵列高度差从13μm降低到4.2μm。

Numerical analysis and experimental research on the defects remove in mask electrochemical deposition were carried out.The formation reason of defects in mask electrochemical deposition and the principle of removing defects were described.During the defect removal process,electric field analysis and mathematical calculation were conducted to abtain the relationship between the amplitude of the sinusoidal profile of"saddle"shape and the deposition time of the current and the current passing time as well as the processing time as 9.48 s when the height difference of the top of the microcolumn decreased to 3μm.The comparison of experimental results shows that the height difference of microcolumn array decreases from 13μm to 4.2μm after electrolytic leveling.