摘要
本文仅将对SiCMOSFET的快速短路检测与保护和IGBT和MOSFET免受ESD损坏与静电击穿及新型静电防护(ESD)技术等二大热点作研讨。与此同时对伴随可靠性解决方案中的SiCMOSFET的快速短路检测与保护及高速SoC和RFIC电磁串扰解决方案应用中举措及新趋势作分析说明。
This paper will only focus on the rapid short-circuit detection and protection of Sic MosFET,IGBT and MOSFET from ESD damage and electrostatic breakdown,and new electrostatic protection(ESD)technology.At the same time,the measures and new trends in the application of high speed SoC and RFIC electromagnetic crosstalk solutions for SiC MOSFETs with reliability solutions are analyzed.
出处
《磁性元件与电源》
2023年第9期167-172,共6页
Components and Power
关键词
短路检测
门级驱动
栅极氧化层
静电击穿与保护
Short-circuit detection
gate level drive
Grid oxide layer
Electrostatic breakdown and protection
