摘要
有效利用专利文献对产业链进行分析,能够清晰地发现产业链中涉及的研发主体有哪些,以及各主体的研发重点和方向,有利于把握整个产业的技术创新发展趋势。文章从申请趋势、技术分析、申请人、地域分布等多个视角对碳化硅产业链进行了全方位分析,从专利的角度阐述了碳化硅产业当前发展态势和研发主体情况,为第三代半导体产业链的创新发展提供参考。
The effective use of patent literature to analyze the industrial chain can clearly find out which R&D subjects are involved in the industrial chain,as well as the R&D focus and direction of each subject,which is conducive to grasping the development trend of technological innovation in the whole industry.This paper makes a comprehensive analysis of the silicon carbide industry chain from the perspectives of application trend,technical analysis,applicant and regional distribution.This paper expounds the current development trend and R&D subject of silicon carbide industry from the perspective of patent,and provides reference for the innovation development of the third generation semiconductor industry chain.
作者
刘锐
李安丽
程新华
Liu Rui;Li Anli;Cheng Xinhua(Shanxi Science and Technology Information and Strategic Research Center,Taiyuan 030024,China;Policy Research Center of Shanxi Transformation Comprehensive Reform Demonstration Zone,Taiyuan 030032,China)
出处
《青海科技》
2023年第4期99-107,共9页
Qinghai Science and Technology
基金
山西省科技战略研究专项“山西省第三代半导体产业创新发展对策研究”(202104031402168)。
关键词
碳化硅
产业链
专利分析
发展趋势
Silicon carbide
Industry chain
Patent analysis
Development trend