期刊文献+

基于专利分析的碳化硅产业链发展现状及趋势研究

Research on the Development Status and Trend of Silicon Carbide Industry Chain Based on Patent Analysis
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摘要 有效利用专利文献对产业链进行分析,能够清晰地发现产业链中涉及的研发主体有哪些,以及各主体的研发重点和方向,有利于把握整个产业的技术创新发展趋势。文章从申请趋势、技术分析、申请人、地域分布等多个视角对碳化硅产业链进行了全方位分析,从专利的角度阐述了碳化硅产业当前发展态势和研发主体情况,为第三代半导体产业链的创新发展提供参考。 The effective use of patent literature to analyze the industrial chain can clearly find out which R&D subjects are involved in the industrial chain,as well as the R&D focus and direction of each subject,which is conducive to grasping the development trend of technological innovation in the whole industry.This paper makes a comprehensive analysis of the silicon carbide industry chain from the perspectives of application trend,technical analysis,applicant and regional distribution.This paper expounds the current development trend and R&D subject of silicon carbide industry from the perspective of patent,and provides reference for the innovation development of the third generation semiconductor industry chain.
作者 刘锐 李安丽 程新华 Liu Rui;Li Anli;Cheng Xinhua(Shanxi Science and Technology Information and Strategic Research Center,Taiyuan 030024,China;Policy Research Center of Shanxi Transformation Comprehensive Reform Demonstration Zone,Taiyuan 030032,China)
出处 《青海科技》 2023年第4期99-107,共9页 Qinghai Science and Technology
基金 山西省科技战略研究专项“山西省第三代半导体产业创新发展对策研究”(202104031402168)。
关键词 碳化硅 产业链 专利分析 发展趋势 Silicon carbide Industry chain Patent analysis Development trend
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