摘要
报道一种新型的免掺杂电子传输材料——TiC_(x)O_(y),具有非晶相为主少量晶化相的混合相结构,约4.1 eV的低功函数和2.63 eV的宽带隙,可实现对电子的零势垒传输和对空穴的高势垒(1.64 eV)阻挡;TiC_(x)O_(y)/n型硅异质接触可获得17.74 mΩ·cm2的低接触电阻率,可实现对电子的选择性输运功能。TiC_(x)O_(y)薄膜用作全背面n型硅异质结电池的电子传输层,可大幅提高电池的开路电压和填充因子,最优电池的绝对效率提高3%。
This article reports TiC_(x)O_(y)as a novel dopant-free electron-transport material.TiC_(x)O_(y)is a mixed-phase material which is composed of the dominant amorphous phase and a small proportion of crystalline phase.TiC_(x)O_(y)material has a low work function of about 4.1 eV and a wide bandgap of 2.63 eV,realizing 0 eV energy barrier for electrons transport and high blocking energy barrier of 1.64 eV for holes transport.A low contract resistivity of 17.74 mΩ·cm2 has been realized for TiC_(x)O_(y)/n-Si heterocontact,realizing the function of electron-selective transport.TiC_(x)O_(y)thin film was applied for the full-area,rear-side electron-transport layer of n-type silicon heterojunction solar cell.As a result,the introduction of TiC_(x)O_(y)thin film significantly increases open-circuit voltages and fill factors of solar cells,and the absolute conversation efficiency of champion solar cell is promoted by 3%.
作者
孙彪
丁阳
黄志平
陈静伟
韦德远
许颖
Sun Biao;Ding Yang;Huang Zhiping;Chen Jingwei;Wei Deyuan;Xu Ying(College of Physical Science and Technology,Hebei University,Baoding 071002,China;Faculty of Information Engineering,Quzhou College of Technology,Quzhou 324000,China;College of Science,Zhejiang University of Technology,Hangzhou 310014,China)
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2023年第7期141-146,共6页
Acta Energiae Solaris Sinica
基金
河北省重点研发计划(20314305D)
教育部“春晖计划”合作科研项目(2019)
国家重点研发计划(2018YFB1500500)
国家自然科学基金青年基金(61704045)。
关键词
太阳电池
硅异质结
免掺杂
电子选择性接触
solar cells
silicon heterojunction
dopant-free
electron-selective contact
