集成ASIC补偿电路的高温动态MEMS压力传感器

High Temperature Dynamic MEMS Pressure Sensor with Integrated ASIC Compensation Circuit

随着工业技术的进步,高温高动态压力传感器的应用需求显著增加。提出一种集成专用补偿电路的高动态硅压阻式微电子机械系统(Micro-Electro-Mechanical Systems,MEMS)压力传感器,进行压力敏感芯片的结构设计和加工工艺设计,并对压力传感器进行封装和温度补偿电路设计。多层绝缘体上硅(Silicon On Insulator,SOI)材料能够使传感器在高温环境下正常工作。无引线的封装方式可有效提升传感器的频响性能。传感器后端集成了桥阻式专用集成电路(Application Specific Integrated Circuits,ASIC),能够显著减小传感器的体积,同时提升传感器整体性能。该MEMS传感器通过自动压力测试系统进行性能试验,结果表明MEMS压力传感器经过补偿后能够实现较高的线性度、稳定的零点输出特性以及理想的动态输出特性。

With the development of industrial technology,the application demand of high temperature and high dynamic pressure sensor increases significantly.In this paper,a high dynamic silicon piezoresistive Micro-Electro-Mechanical Systems(MEMS)pressure sensor integrated with special compensation circuit is proposed.The structure and processing technology of pressure sensitive chip are designed,and the pressure sensor is packaged and the temperature compensation circuit is designed.The multi-layer Silicon On Insulator(SOI)material enables thes ensor to work normally in high temperature environment.The leadless packaging mode effectively improves the frequency response performance of the sensor.A bridge resistance Application Specific Integrated Circuits(ASIC)is integrated into the reare nd of the sensor to significantly reduce the size of the sensor while improving overall sensor performance.The MEMS sensor was tested by the automatic pressure test system.The results show that the MEMS pressure sensor can achieve high linearity,stable zero output characteristic and ideal dynamic output characteristic after compensation.