3-巯基丙基三甲氧基硅烷插层氧化石墨烯的硅烷化研究

Silylation of Graphene Oxide by 3-Mercaptopropyltrimethoxysilane

本文报告了在不同硅烷化反应时间下,通过3-巯基丙基三甲氧基硅烷(MPTS)对氧化石墨烯(Graphene Oxide,GO)插层并表面硅烷化。通过X射线衍射(XRD)、红外光谱(IR)、热重分析(TGA)和扫描电子显微镜(SEM)对所得产物(MPTS-GO)进行了表征。实验结果表明MPTS-GO的Si含量随着硅烷化时间的增加而减少,当硅烷化时间大于24 h时,所制备的MPTS-GO样品中的Si含量几乎相同。当硅烷化时间大于24 h时,GO硅烷化基本完成。本文提出,在插层硅烷化后,GO有序的层状结构被打乱,MPTS主要通过Si-O键与GO表面的羟基反应相连接。末端具有“自由”巯基的MPTS-GO可用于进一步的组装及性能研究。

Herein we report on the silylation of graphene oxide(GO)by 3-mercaptopropyltrimethoxysilane(MPTS)under various reaction conditions.The resulting product(MPTS–GO)was characterized by X-ray diffraction(XRD),infrared spectroscopy(IR),thermogravimetric analysis(TGA)and scanning electron microscope(SEM).It was proposed that the lamellar structure of GO was destroyed after intercalation and silylation,and MPTS mainly connected to surface hydroxyl groups of GO via the Si–O bonding.MPTS–GO with“free”mercapto groups could be available for the further assembly and performance investigation..