基于硒微米棒的宽光谱响应的光电探测器

Selenium microrods-based broadband photodetector

采用物理气相沉积法合成硒微米棒,并以银浆为电极制备了金属-半导体-金属结构的光电探测器。该光电探测器在3 V偏压和450 nm光照下具有快速的响应速度(上升时间=41 ms,下降时间=46 ms),优异的响应度(18.32 m A/W)和探测率(1.65×10^(8)Jones)。光谱测试表明器件具有从可见光到近红外的宽光谱探测能力(450~1550 nm)。此外,该器件还可以在无偏压下进行自供能探测。本研究将进一步完善硒半导体在宽光谱光电探测中的应用和发展。

In this paper,Se microrods were synthesized using a physical vapor deposition method,and a metalsemiconductor-metal(MSM)photodetector was fabricated by using silver paste as the electrode.This photodetec⁃tor exhibits a fast response time(Tr=41 ms,Td=46 ms),excellent responsivity(18.32 mA/W),and detectivity(1.65×10^(8)Jones)at 3 V bias and under 450 nm light illumination.Spectral measurements demonstrate that the device has a broadband detection range from visible to near infrared range(450~1550 nm).Additionally,the de⁃vice can also perform self-powered detection without bias.This research will further improve the application and development of Se in broadband photodetection.