面向FC-BGA的增层胶膜封装基板镀铜工艺

Cu deposition technologies for build-up film substrates towardsFC-BGA

近年来,基于增层胶膜材料,采用半加成法工艺生产制造窄线宽/线距电子线路的倒装芯片球栅阵列(FCBGA)封装基板的相关技术发展迅速.增层胶膜材料微观结构及其物理、化学性质、镀铜工艺参数和化学药水等多个因素共同决定线路精细度和结合力,并最终影响封装基板的品质和可靠性,其内在关联性值得关注和深入研究.本文基于FC-BGA增层胶膜封装基板的导电互连制造技术,重点探讨半加成法工艺所用化学药水的成分及作用,并结合镀铜的性能评价,提出未来进一步提高封装基板线路品质的发展方向.

In recent years,technologies concerning flip chip ball grid array(FC-BGA)substrates with the circuitry of narrow line/space have witnessed significant developments,which are fabricated on build-up films(BFs)via the semiadditive process(SAP).A variety of factors including microstructures,physical and chemical features of build-up films,copper deposition parameters and relevant chemical bath compositions collectively determine the resolution and bonding strength of fabricated circuitry and ultimately affect the quality and reliability of packaging substrates,which makes it meaningful to study and reveal the relevance of these factors.Based on the fabrication technologies of copper interconnects in build-up film substrates towards FC-BGA,this review puts emphasis on the discussion of copper plating bath compositions in the semi-additive process on build-up films,and outlooks possible future prospects of further increasing the quality of circuitry,in accordance with some key evaluation factors of deposited copper.