大马士革电镀铜超级填充研究进展和展望

Progress and prospects of super-filling in Damascene copper electroplatingprocess

大马士革电镀铜是构筑芯片中互连网络的核心技术,也是我国攻克高端芯片制造的“卡脖子”领域.本文介绍了大马士革电镀铜技术的发展及实现电镀铜“超级填充”的重要意义,并分别从超级填充的物理模型研究、超级填充的添加剂及其作用机制研究两方面重点综述了近年来取得的研究成果和仍然存在的不足,结合当前新兴的理论计算方法和界面电化学研究方法,对未来电镀铜技术研究的发展进行了展望,为先进制程芯片电镀添加剂的研发及机理的研究提供参考.

The essential technique for fabricating interconnects on wafers for high-end integrated chip manufacturing is damascene copper electroplating,and it is the“bottleneck”technology for China to overcome the manufacturing of the advanced chip below 14 nm node.In this article,the evolution of the Damascene copper electroplating process and the significance of“superfilling”in nano-trenches and vias are discussed.In particular,recent research accomplishments are summarized,and current weaknesses are highlighted.We go into great detail about the research on the physical model of superfilling and the structure with the interfacial mechanism of the organic additives.Future research direction on the copper electroplating is discussed,along with in-situ electrochemical methods and rapidly developing theoretical calculation techniques,which will boost the research and development of novel additives.