板式PECVD氮化硅薄膜工艺研究

Plate PECVD deposition process of silicon nitride thin films

本文采用微波等离子增强化学气相沉淀技术,在单晶硅衬体上高速沉积一层氮化硅薄膜。通过对比实验,系统研究了沉积压强、气体流量、微波功率、温度等工艺参数对氮化硅薄膜沉积速率、折射率的影响,分析其产生机理。通过优化氮化硅沉积的工艺参数,采用分步沉积氮化硅工艺,测试对比两者内量子效应和光谱反射率,得出分步沉积氮化硅工艺,在200~400 nm短波段,反射率更低,进一步降低了氮化硅薄膜对光的反射率。同时,在1000~1200 nm的长波段,内量子效应增强,表明提升氮化硅薄膜的钝化效果,最终实现晶硅太阳能电池效率提升0.1%,为优化生产工艺奠定了良好基础。

The silicon nitride film was deposited on a monocrystalline silicon liner by microwave plasma enhanced chemical vapor precipitation.Through comparative experiments,the effects of deposition pressure,gas flow,microwave power,temperature and other process parameters on deposition rate and refractive index of silicon nitride films were systematically studied,and the mechanism of their production was analyzed.By optimizing the process parameters of silicon nitride deposition,the quantum effect and spectral reflectance of the two processes were tested and compared,and it was concluded that the reflectance of the silicon nitride film was lower at 200~400 nm short wave,which further reduced the reflectance of the film to light.At the same time,in the long band of 1000~1200 nm,the internal quantum effect was enhanced,indicating that the passivation effect of silicon nitride film was improved,and the efficiency of crystalline silicon solar cells was finally increased by 0.1%,which laid a good foundation for optimizing the production process.