具有亚2-nm沟道长度的二维垂直p-n结二极管

Two-dimensional vertical p-n diodes with sub-2-nm channel lengths

尺寸极限微缩的p-n结二极管对互补金属氧化物半导体(CMOS)集成电路的发展至关重要.然而,由于界面缺陷和短沟道效应,实现5 nm以下沟道长度的p-n结二极管仍然面临着巨大的挑战.本文展示了1.9 nm沟道的WSe_(2)/WS_(2)垂直p-n结二极管,实现了~8×10^(3)的高开关比和~17的整流比.此外,沟道长度为4.7 nm的器件具有~10^(4)的高开关比和~10^(3)的整流比.其高性能源于无肖特基势垒的接触导致的理想带排列,以及无缺陷的全范德华(vdW)界面导致的低隧穿电流和小的费米钉扎效应.因此,我们实现了p-n二极管的本征性能.该策略也可以扩展到其他的p-n结,如WSe_(2)/MoSe_(2)和WSe_(2)/MoS_(2),这表明我们的策略具有普适性.该策略为电子器件尺寸微缩和集成电路的进一步发展提供了新的思路.

Ultra-scaled p-n diodes are essential to the development of complementary metal oxide semiconductor(CMOS)integrated circuits.However,realizing p-n diodes with sub-5-nm channel length still faces great challenge due to the interface defects and short channel effect.Here,we demonstrate 1.9-nm WSe_(2)/WS_(2) vertical p-n diodes,realizing a high on/off ratio of~8×10^(3) and a rectification ratio of~17.Furthermore,the device with 4.7-nm channel length exhibits an excellent on/off ratio of~10^(4) and a rectification ratio of~10^(3).The high performances stem from the near-ideal bandalignment via designed Schottky-barrier-free contact,and the minimized tunneling current and Fermi-level pinning via full van der Waals(vdW)interfaces without defects.Thus,the intrinsic characteristics of p-n diodes are realized.This strategy can also be extended to other p-n junctions such as WSe_(2)/MoSe_(2) and WSe_(2)/MoS_(2),indicating universality of our strategy.Our devices provide great insight into ultimate scaling of electronic devices toward further development of integrated circuits.