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多通道器件过电应力失效问题分析研究

Analysis and Research on Electrical Overstress Failure of Multi-Channel Devices
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摘要 过电应力失效作为集成电路应用中最常见的失效模式,是导致器件现场失效的重要原因,为进一步克服这一失效因素,提高成品率,以某型号器件的具体失效案例为例,从产品失效机理出发展开研究,提出一种针对多通道结构器件的过电应力失效分析方法。首先逐一排查ESD脉冲、系统异常脉冲和开关机浪涌电流等失效因素,根据失效因素进行仿真试验,使产品质量问题复现,定位产品失效原因,最终采用应用设计优化的方式彻底解决此类结构的过电应力失效问题。该分析方法有利于增强集成电路器件的质量保障,对于不同结构的集成电路也有一定的引申参考价值。 Electrical overstress failure,as the most common failure mode in integrated circuit applications,is an important cause of device field failure.In order to further overcome this failure factor and improve the yield,taking a specific failure case of a certain type of device as an example,the failure mechanism of the product is studied,and a failure analysis method for multi-channel structure devices is proposed.Firstly,the failure factors such as ESD pulse,system abnormal pulse and on-off surge current are investigated one by one,and the simulation experiment is carried out according to the failure factors,so that the product quality problem can be reproduced and the failure reason of the product can be located.Finally,the electrical overstress failure problem of this kind of structure can be completely solved by applying design optimization.The analysis method is conducive to enhancing the quality assurance of integrated circuit devices,and has certain extended reference value for integrated circuits with different structures.
作者 金元石 JIN Yuanshi(The 47th Institute of China Electronics Technology Group Corporation,Shenyang 110000,China)
出处 《微处理机》 2023年第5期13-17,共5页 Microprocessors
关键词 过电应力 ESD失效 失效分析 多通道结构 Electrical overstress ESD failure Failure analysis Multi-channel structure
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