摘要
本文主要研究沟道长宽比对器件电学性能的影响。在室温下采用射频磁控溅射法,AZTO溅射功率为100 W,氩氧比为98∶2,溅射时间为15 min,在硅衬底上制备了以AZTO为有源层,沟道宽度为10 um、20 um、30 um、40 um的薄膜晶体管(Thin Film Transistor,TFT)。并采用原子力显微镜(AFM)、X射线衍射仪(XRD)、半导体参数仪和紫外-可见分光光度计,分别对薄膜表面粗糙度、薄膜的体相结构、器件电学性能以及光透过率进行表征。结果表明:上述条件制备的AZTO薄膜成膜质量较好,随着沟道宽度的变窄,开态电流逐步增大,阈值电压逐渐负向偏移,电流开关比逐渐变大,器件的整体性能依然是逐渐提高的,在沟道宽度为10 um时,开态电流为,阈值电压为-7.843 2 V,电流开关比达到。
In this paper,the influence of channel aspect ratio on the electrical performance of the device is studied.Using RF magnetron sputtering method at room temperature,AZTO sputtering power is 100 W,argon-oxygen ratio is 98:2,sputtering time is 15 min,and AZTO as active layer is prepared on silicon substrate.Thin Film Transistor(TFT)with channel widths of 10 um,20 um,30 um,40 um.Atomic force microscopy(AFM),X-ray diffractometer(XRD),semiconductor parameter analyzer and ultraviolet-visible spectrophotometer were used to characterize the surface roughness,bulk phase structure,electrical properties and light transmittance of the films.The results show that:The film forming quality of AZTO films prepared under the above conditions is good.With the narrowing of channel width,the on-state current gradually increases,the threshold voltage gradually shifts negatively,and the current switching ratio gradually increases.Therefore,the overall performance of the devices is gradually improved.When the channel width is 10 um,the on-state current is,The threshold voltage is-7.8432V,and the current switching ratio reaches.
出处
《日用电器》
2023年第9期98-101,共4页
ELECTRICAL APPLIANCES
基金
吉林省科技计划项目,项目编号:2022-KL-09
吉林省科技发展计划项目,项目编号:20200201177JC
吉林省科技厅,项目编号:YDZJ202301ZYTS489。
