MPCVD制备金刚石的研究

Study on Preparation of Diamond by MPCVD

金刚石在材料家族中是集力、光、电、声、热、磁于一身的最优秀的材料。它不仅在工程领域中得到了广泛应用,而且在功能应用中也是大有作为的材料。因此,吸引着国内外广大科技工作者对其进行研发的极大欲望。文章简要地介绍了多晶金刚石薄膜、大尺寸单晶金刚石(Single Crystal Diamond—SCD)合成过程中的腔体压强大小、基体温度的高低、衬底材质与表面粗糙度等工艺参数以及饰钻培育的形核、生长质量等技术问题的研究结果。通过实践分析得到了高温形核-低温生长的梯度规律和腔体内压强和基体温度低或过高都不利于生长出高质量金刚石薄膜的规律。

Diamond is the best material that integrates force,light,electricity,sound,heat and magnetism in the material family.It is not only widely used in the field of engineering,but also a promising material in functional applications.Therefore,it attracts the great desire of the majority of scientific and technological workers at home and abroad to carry out research and development.This article briefly introduces the process parameters such as cavity pressure,substrate temperature,substrate material and surface roughness in the synthesis process of polycrystalline diamond films and large-sized single crystal diamond,as well as the research results of the nucleation and growth quality of diamond cultivation techniques.Through practical analysis,it is obtained that the gradient law of high temperature nucleation and low temperature growth,and the law that low or too high pressure in the cavity and substrate temperature are not conducive to the growth of high quality diamond films.